Semiconductor light-emitting device
文献类型：专利
| 作者 | YOKOZUKA TATSUO; TAKAMORI AKIRA |
| 发表日期 | 1991-11-26 |
| 专利号 | JP1991265183A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To emit laser light of a wavelength under 0.67mum with an active layer not containing aluminum and lengthen lifetime by forming a clad layer, which is lattice-matched with a substrate and the band gap of which is at least 0.25eV larger than that of the active layer. CONSTITUTION:In a structure consisting of a p-AlGaInP clad layer 104, a GaInP active layer 105, an n-AlGaIn clad layer 106, etc., the layer 105 is of distorted lattice structure composed of GayIn1-yP (0.5<=y<=1). That is, the same layer consists of a plurality of Ga0.5In0.5P well layers 108 and Ga0.6In0.4P barrier layers 109 containing a higher rate of gallium than the layers 108. The layer 104 is lattice-matched with a GaAs substrate 107 and the band gap of the layer 104 is at least 0.25eV larger than that of the layer 105. Thereby laser light of a wavelength under 0.67mum can be emitted with the layer 105 not containing aluminum, characteristics decrease little, lifetime is lengthened, size is reduced, and low-consumed-power coherent light is obtained. |
| 公开日期 | 1991-11-26 |
| 申请日期 | 1990-03-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74047]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | YOKOZUKA TATSUO,TAKAMORI AKIRA. Semiconductor light-emitting device. JP1991265183A. 1991-11-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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