Semiconductor laser device
文献类型：专利
| 作者 | KOUNO TOSHIHIRO; OOTOSHI SOU; KAJIMURA TAKASHI |
| 发表日期 | 1985-06-21 |
| 专利号 | JP1985115281A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To facilitate the operations to bury and cause to grow layers in an SBH-type high-output semiconductor laser, by providing a specified layer between a clad layer and a cap layer. CONSTITUTION:An N type GaAs substrate 1 is provided with an N type G0.66 Al0.34As clad layer 2, an N type Ga0.7Al0.3As light quide layer 3, an undoped Ga0.86Al0.14As active layer 4, a P type Ga0.5Al0.5As clad layer 5, a P type Ga1-x AlxAs (0<=x<=0.18) layer 7 and a P type Ga0.8Al0.2As cap layer 6, which are caused to grow on the substrate successively in that order. The clad layers 2 and 5 have refractive indices smaller than that of the light guide layer 3, which in turn has a smaller refractive index than that of the active layer. Mesa stripes are formed, and buried with a P type Ga0.5Al0.5As current blocking layer 8 and an N type Ga0.5Al0.5As layer 9. In this case, since the growth of the side portion of the mesa stripes in initiated from the layer 7, the growth is allowed to progress smoothly without causing any incomplete growth. |
| 公开日期 | 1985-06-21 |
| 申请日期 | 1983-11-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74056]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | KOUNO TOSHIHIRO,OOTOSHI SOU,KAJIMURA TAKASHI. Semiconductor laser device. JP1985115281A. 1985-06-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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