Semiconductor laser
文献类型：专利
| 作者 | WATANABE SEIICHI; YONEYAMA OSAMU; UMEZAWA ISAO |
| 发表日期 | 1988-03-11 |
| 专利号 | JP1988056980A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To realize reduction of threshold current, by a method wherein a part having light confining function to prevent photon generated in an oscillation part from vanishing is constituted, by providing both sides of the oscillation part in an active layer with step portions CONSTITUTION:A semiconductor substrate 1 composed of n-type GaAs single crystal is provided, on a main surface of which a stripe-type protrusion is formed. On both sides of it, step portions 2A and 2B are formed so as to confront each other, which constitute a projecting step-difference part 2. Then on the substrate 1, the following are continuously grown in order by epitaxy; i.e, an n-type AlGaAs system clad layer 3, an active layer 4, a p-type clad layer 5 and a p-type cap layer 7. In the active layer 4, step portions 6A and 6B corresponding to the step difference part 2 are formed, between which a step-difference part 6 is formed. An insulative layer 8 of SiO2 and the like which has a stripe-type electrode window 8a facing the step-difference part 6 is arranged. Thereon an electrode 9 is stuck to the cap layer 7 through the window 8a, and an electrode 10 is provided on the other surface of the substrate Simplification of manufacturing process and reduction of threshold current can be realized, thereby. |
| 公开日期 | 1988-03-11 |
| 申请日期 | 1986-08-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74058]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | WATANABE SEIICHI,YONEYAMA OSAMU,UMEZAWA ISAO. Semiconductor laser. JP1988056980A. 1988-03-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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