Semiconductor laser
文献类型：专利
| 作者 | OISHI AKIO; HIRAO MOTONAO; KAYANE NAOKI; TSUJI SHINJI; NAKAMURA HITOSHI; MATSUMURA HIROYOSHI |
| 发表日期 | 1986-10-21 |
| 专利号 | JP1986236188A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To make it easy to control the position and the width of an active layer at the time of mesa-etching, by providing one or more P-N junction on both sides of the stripe of the inverse mesa type, and installing the boundary surface of the P-N junction between the narrowest part and the upper end of the stripe of the inverse mesa type. CONSTITUTION:The active layer 2, the P-type buffer layer 8, and the P-type clad layer 3 are grown in order on the N-type substrate After the stripe mask is formed and only the clad layer 3 on the buffer layer 8 is subjected to the selective etching to form the mesa, the active layer 2 and the buffer layer 8 are subjected to etching and the inverse mesa is formed. The mask is eliminated, and the P-type current blocking layer 4, the N-type current blocking layer 5, the P-type layer 6, and the P-type cap layer 7 are grown. In this process, the thickness of the P-type current blocking layer 4 is made smaller than that of the P-type clad layer 3, and creeping of the layer 4 is restrained by virtue of the inverse mesa. The current blocking layer of the P-N junction is formed in the middle part of the inverse mesa. Thus, the control of the position and the width of the active layer at the time of mesa etching is made easy, and the current blocking layer can be made uniform. |
| 公开日期 | 1986-10-21 |
| 申请日期 | 1985-04-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74062]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | OISHI AKIO,HIRAO MOTONAO,KAYANE NAOKI,et al. Semiconductor laser. JP1986236188A. 1986-10-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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