Semiconductor light-emitting element
文献类型：专利
| 作者 | KAMIJO TAKESHI; HASHIMOTO AKIHIRO; OOTA TSUNEAKI; KAWAHARA MASATO |
| 发表日期 | 1987-01-24 |
| 专利号 | JP1987015866A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting element |
| 英文摘要 | PURPOSE:To enable a high-output light-emitting element to be attained using an indirect gap semiconductor material, by constructing the title element using a semiconductor material which has been changed from an indirect transition type electron structure to a direct transition type electron structure by introducing and disposing an impurity in the empty hole portion of the zincblende type structure. CONSTITUTION:A material of the zincblende type structure is used as a semiconductor material having the indirect transition type electron structure, and the indirect transition type electron structure is changed to the direct transition type electron structure by introducing and disposing an impurity in the empty hole portion of this zincblende type structure. A semiconductor light-emitting element is constructed using the semiconductor material obtained in this manner. If the semiconductor light-emitting element is made into a light emitting diode, for instance, a GaP semiconductor material is used, and a P-N junction is constructed by a P-type GaP/He superlattice layer 10 and an N-type GaP/He superlattice layer 12. If the semiconductor light-emitting element is made into a semiconductor laser, for instance, GaP is used as the semiconductor material, and a double-hetero structure is constructed by an N-type AlGaP clad layer 16, an N-type GaP/He superlattice active layer 18 and a P-type AlGaP clad layer 20. |
| 公开日期 | 1987-01-24 |
| 申请日期 | 1985-07-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74064]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | KAMIJO TAKESHI,HASHIMOTO AKIHIRO,OOTA TSUNEAKI,et al. Semiconductor light-emitting element. JP1987015866A. 1987-01-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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