Semiconductor laser device
文献类型：专利
| 作者 | YOSHIKAWA NORIYUKI; SHIMIZU YUUICHI |
| 发表日期 | 1986-01-27 |
| 专利号 | JP1986018190A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain satisfactory bonding strength and suppress the occurrence of a short-circuiting phenomenon due to an undesirable rise of Sn, by employing an Si sub-mount having a multiplicity of parallel grooves all over a surface thereof which is bonded to a semiconductor laser chip. CONSTITUTION:An Si wafer is provided with grooves by a single etching treatment. Ni dry plating is effected, and deposition of Cr, Ni-Cr, Ni and Sn is carried out by evaporation. The wafer is diced to obtain an Si sub-mount 9. Since the Si sub-mount 9 has a multiplicity of parallel grooves arranged at a distance smaller than the width of a semiconductor laser chip 1, even the chip 1 around which a coating agent passes after the bonding can be reliably bonded with excellent adhesion between two bonding surfaces. In addition, the deposited metal layer Sn 2, when heated at high temperature during the bonding, flows in a direction in which it fills the grooves. Therefore, the Sn 2 can hardly rise. |
| 公开日期 | 1986-01-27 |
| 申请日期 | 1984-07-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74066]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | YOSHIKAWA NORIYUKI,SHIMIZU YUUICHI. Semiconductor laser device. JP1986018190A. 1986-01-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。