Semiconductor light emitting device
文献类型：专利
| 作者 | YOSHIE, TOMOYUKI; GOTO, TAKENORI; HAYASHI, NOBUHIKO |
| 发表日期 | 2003-06-17 |
| 专利号 | US6580736 |
| 著作权人 | EPISTAR CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | In a semiconductor laser device, a buffer layer, an n-contact layer, an n-light cladding layer, an n-light guide layer, an emission layer, a p-cap layer, a p-light guide layer and an n-current blocking layer having a striped opening are successively formed on a sapphire substrate, and a p-light cladding layer is formed in the opening. A p-contact layer is formed on the p-light cladding layer and on the n-current blocking layer. The n-current blocking layer is made of n-Al0.3Ga0.7N and has an electron concentration of 1x1017 cm-3 and an Al composition greater than 0.1, and the surface thereof is terminated with N. |
| 公开日期 | 2003-06-17 |
| 申请日期 | 2000-03-23 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74072]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | EPISTAR CORPORATION |
| 推荐引用方式 GB/T 7714 | YOSHIE, TOMOYUKI,GOTO, TAKENORI,HAYASHI, NOBUHIKO. Semiconductor light emitting device. US6580736. 2003-06-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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