Semiconductor laser device
文献类型：专利
| 作者 | NAKATSUKA SHINICHI; KAYANE NAOKI; ONO YUICHI; KAJIMURA TAKASHI; KONO TOSHIHIRO |
| 发表日期 | 1986-08-01 |
| 专利号 | JP1986171188A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To eliminate astigmatism by a method wherein a semiconductor substrate outside a groove is provided with parts higher than the substrate surface except in the neighborhood of one photo emission end surface. CONSTITUTION:On an N-type GaAs substrate 1, using an SiO2 mask, only a groove is formed at the part of a region I by etching, and regions 3 more rising than the substrate surface which are provided at positions distant from the ends of the groove are formed at a region II. Thereafter, An N-GaAlAs clad layer 5, an undoped GaAlAs active layer 6, a P-GaAlAs clad layer 7, and an N-GaAs cap layer 8 are successively grown. With the mask of an SiNx film, Zn is selectively diffused 11 to the cap layer at the stripe section, and an AuGeNi/CrAu electrode 9 and a Cr/Au electrode 10 are evaporated. This construction produces a large difference in refractive index because the N- GaAlAs clad layer and the active layer formed over the groove are thinner than at the element center and yields the device of small astigmatism because of the confinement of laser beams. |
| 公开日期 | 1986-08-01 |
| 申请日期 | 1985-01-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74087]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | NAKATSUKA SHINICHI,KAYANE NAOKI,ONO YUICHI,et al. Semiconductor laser device. JP1986171188A. 1986-08-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。