Semiconductor laser device
文献类型：专利
| 作者 | YAMASHITA SHIGEO; KAYANE NAOKI; OOUCHI HIROBUMI; KAJIMURA TAKASHI; KASHIWADA YASUTOSHI |
| 发表日期 | 1984-01-21 |
| 专利号 | JP1984011690A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain the multi-axis mode semiconductor laser device, which operates stably against disturbances such as return lights by the reflection of laser lights, by forming a stepped difference in thickness to one of second and third semiconductor layers and giving an optical guide constituted in a first semiconductor layer inequality with regard to the direction of advance of laser lights. CONSTITUTION:An N-type GaAs layer 12 is formed on a P type GaAs substrate surface 11 first, and a concave groove, width thereof changes irregularly, is prepared through photolighograhy. A P type Ga0.55Al0.45As clad layer 13, an undoped Ga0.86Al0.14As active layer 14, an N type Ga0.55Al0.45As clad layer 15, and an N type GaAs cap layer 16 are formed continuously through a normal liquid growth method. An N electrode 17 is formed to the surface and a P electrode 18 to the back. Since currents are constricted efficiently in a laser active section by the N type GaAs layer 12 formed to the surface of the substrate 11 in the laser element, the laser, oscillation threshold thereof can be reduced, oscillates at approximately 30mA oscillation threshold and 780nm wavelength, and oscillates stably in a lateral fundamental mode up to 20mW. |
| 公开日期 | 1984-01-21 |
| 申请日期 | 1982-07-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74101]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | YAMASHITA SHIGEO,KAYANE NAOKI,OOUCHI HIROBUMI,et al. Semiconductor laser device. JP1984011690A. 1984-01-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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