Semiconductor laser
文献类型：专利
| 作者 | FUJIWARA KENZO; TOKUDA YASUKI; TSUKADA NORIAKI; MATSUI TERUHITO |
| 发表日期 | 1988-02-12 |
| 专利号 | JP1988032983A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To make wavelength of oscillation shorter, by forming a light-guide layer also used as a reservoir for injection carriers so as to obtain SCH structure and besides by making a stripe width smaller than a specified dimension. CONSTITUTION:An active layer 5 is formed of one or more quantum-well layers, its upper and front plane sides are provided with light-guide layers 5a and 5b, respectively, whose forbidden band widths are formed to have middle values between the band widths of clad layers 5a, 5b and those of the quantum well layers, to compose SCH (Separate Confinement Heterostructure). Light guide layers 5a and 5b are made to be 6 microns or less in width, with their internal loss of light propagation being enlarged. The embedded layer 13 part, in which Si is diffused, has an effective refractive index smaller than the active layer 5 part, therefore to obtain refractive-index guided waves. Moreover, in the embedded layer 13 part, a potential barrier to which carriers are sensitive becomes larger than in the central stripe part because of mixed crystallization formed among the clad layers 4, 6 in a high Al mol ratio, the light guide layers 5a, 5b, and the active layer 5, so that gain guided waves are obtained. Hence, oscillation of short-wavelength laser can be easily realized. |
| 公开日期 | 1988-02-12 |
| 申请日期 | 1986-07-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74113]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | FUJIWARA KENZO,TOKUDA YASUKI,TSUKADA NORIAKI,et al. Semiconductor laser. JP1988032983A. 1988-02-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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