Semiconductor laser element
文献类型：专利
| 作者 | TANAKA TOSHIAKI; MINAGAWA SHIGEKAZU |
| 发表日期 | 1992-02-13 |
| 专利号 | JP1992043690A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To restrain the electric current of an element from being spread and to reduce a reactive current by a method wherein a ridge-shaped stepped part is formed on a substrate and the shape of a light-emitting active layer which is epitaxially grown on it by a metal organic vapor growth method is utilized. CONSTITUTION:An SiO2 film is vapor-deposited on an n-GaAs substrate 1; a stripe-shaped SiO2 mask having a width of 1 to 4 mum is formed by a photolith ographic technique; the n-GaAs substrate 1 is etched; the angle at which the inclined face of a ridge-shaped stepped part is formed to a flat face is set at 10 to 15 deg. or higher. Then, the SiO2 mask is etched and removed; double heterolayers of a GaAs buffer layer 2, an n-(AlxGa1-x)0.51In0.49P layer 3, an undoped Ga0.51In0.49P active layer 4, a p-(AlxGa1-x)0.51In0.49P clad layer 5, a p-Ga0.51In0.49P layer 6 and an n-GaAS current construction layer 7 are grown sequentially. Then, an SiO2 film is vapor-deposited; a mask whose central-part stripe has been removed is manufactured by a photolithographic technique; the n-GaAs current constriction layer 7 is etched; a channel width is set at 5.5 to 6.5 mum. |
| 公开日期 | 1992-02-13 |
| 申请日期 | 1990-06-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74127]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | TANAKA TOSHIAKI,MINAGAWA SHIGEKAZU. Semiconductor laser element. JP1992043690A. 1992-02-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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