Semiconductor laser device
文献类型：专利
| 作者 | KAJIMURA TAKASHI; KASHIWADA YASUTOSHI; KAYANE NAOKI; ONO YUUICHI; NAKATSUKA SHINICHI |
| 发表日期 | 1985-07-09 |
| 专利号 | JP1985128689A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a low-noise semiconductor laser having high yield used for an information terminal equipment, such as an optical video disk, an optical disk file, etc. and optical communication by forming a waveguide region by the difference of effective refractive indices near the end surface of a semiconductor laser resonator and forming a gain wave region at the central section of the resonator. CONSTITUTION:An N type Ga0.55Al0.45As layer 2, an un-doped Ga0.86Al0.14As active layer 3, a P type Ga0.55Al0.45As clad layer 4 and an N type GaAs layer 5 are prepared on an N type GaAs substrate 1 through an organic-metal vapor phase growth method, and a window for etching is formed to a photo-resist film on the surface of an epitaxial layer. A groove reaching to the P type Ga0.55 Al0.45As layer is shaped through chemical etching. The photo-resist film is removed, a P type Ga0.55Al0.45As layer 6 and an N type GaAs layer 7 are formed, and a striped Zn selective diffusion region 8 in a width section of 2-5mum is shaped by using the technique of selective diffusion. P side and N side electrodes 12, 11 are formed, and a chip in 400mum width and resonator length of 300mum is manufactured through a cleavage process. The element has structure in which there is no N type GaAs layer 5 at the central section of a resonator. |
| 公开日期 | 1985-07-09 |
| 申请日期 | 1983-12-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74131]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | KAJIMURA TAKASHI,KASHIWADA YASUTOSHI,KAYANE NAOKI,et al. Semiconductor laser device. JP1985128689A. 1985-07-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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