Semiconductor laser device
文献类型：专利
| 作者 | ARIMOTO, SATOSHI, C/O MITSUBISHI DENKI K.K.; NISHIMURA, TAKASHI, C/O MITSUBISHI DENKI K.K.; MOTODA, TAKASHI, C/O MITSUBISHI DENKI K.K. |
| 发表日期 | 1993-11-10 |
| 专利号 | EP0557638A3 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device includes a first conductivity type cladding layer (102), an active layer (103), and a second conductivity type cladding layer (105), disposed on a first conductivity type substrate (101). A multiquantum barrier (104) comprising superlattice semiconductor layers is disposed between the active layer (103) and either of the cladding layers. The active layer includes a layer having a crystal composition in which a lattice constant of the layer is different from a lattice constant of the first conductivity type substrate by 0.1 percent or more so that a strain may be applied to the layer. Therefore, a threshold current is significantly reduced, resulting in a high power semiconductor laser capable of operating at a high temperature. |
| 公开日期 | 1993-11-10 |
| 申请日期 | 1992-07-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74135]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | ARIMOTO, SATOSHI, C/O MITSUBISHI DENKI K.K.,NISHIMURA, TAKASHI, C/O MITSUBISHI DENKI K.K.,MOTODA, TAKASHI, C/O MITSUBISHI DENKI K.K.. Semiconductor laser device. EP0557638A3. 1993-11-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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