Semiconductor laser device
文献类型：专利
| 作者 | KAWADA SEIJI; ISHIKAWA MAKOTO |
| 发表日期 | 1988-02-15 |
| 专利号 | JP1988034993A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To assure the high output characteristics without deteriorating reflection power and absorbing light at the end by a method wherein the refractive index of the third semiconductor exceeds that of the first, the second and the fourth semiconductor layers while the positions in the level direction of the active layer in the main part and the third semiconductor layer in the sub part coincide with each other. CONSTITUTION:A mesa stripe whose step difference surface comprising plane (111) B is formed on an n type GaAs substrate 1 to successively grow semiconductor layers 2-7 by organometallic thermal decomposition and vapor growth process. During the growing process, a crystalline film in parallel with the mesa surface and bottom surface is grown until the crystalline layer is grown in the thickness similar to the height of mesa. The new step difference surface being different from the plane (111) B, any crystalline film newly formed starts growing on the new step difference surface by the layers up to an optical guide layer 5 after the plane (111) B is removed are so thin that the active layer 3 in a light emitting part is almost directly coupled with the optical guide layer 5 without passing through any other layers. In such a constitution, the optical guide layer 5 is encircled by the first and the second p type clad layers 4, 6 in low refractive index so that complete optical waveguide mechanism may exist up to the end. |
| 公开日期 | 1988-02-15 |
| 申请日期 | 1986-07-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74152]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KAWADA SEIJI,ISHIKAWA MAKOTO. Semiconductor laser device. JP1988034993A. 1988-02-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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