Semiconductor laser element
文献类型：专利
| 作者 | KURIHARA HARUKI; FURUKAWA CHISATO |
| 发表日期 | 1989-10-25 |
| 专利号 | JP1989268178A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To alleviate an optical loss between filaments and to easily stabilize to a lowest order supermode by so forming the sectional shape of an active layer parallel to a mirror face as to become a protrusion state in the opposite direction to a substrate side directly above a groove. CONSTITUTION:A ridge 21 is formed in a direction in a plane {100} on a surface of a substrate 1 made of an N-type GaAs single crystal substantially coincident with a crystal face [100]. Five grooves 9, 10, 11, 12, 13 for forming 5 stripelike optical guides are formed on the ridge 2 In the widths of the groove, the central groove 11 is widest, and the widths become narrower toward ends. Then, a first clad layer 3 made of n-type Al0.4Ga0.6As, an active layer 4 made of p-type Al0.05Ga0.05As, a second clad layer 5 made of a p-type Al0.4Ga0.6As, and an ohmic electrode layer 6 made of p-type GaAs are laminated on the substrate 1 by a liquid crystal growth method. In this case, the layers 3, 4 are not caused to grow between the grooves. The growing time of the first clad layer is set to a suitable value or more thereto by obtain a desired active layer shape of upward protrusion. |
| 公开日期 | 1989-10-25 |
| 申请日期 | 1988-04-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74156]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | KURIHARA HARUKI,FURUKAWA CHISATO. Semiconductor laser element. JP1989268178A. 1989-10-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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