Semiconductor laser device
文献类型：专利
| 作者 | MATSUURA NOBUYUKI |
| 发表日期 | 1987-04-08 |
| 专利号 | JP1987076692A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To make the emission of light from an active layer large and to make it possible to start oscillation at a low threshold current, by adopting the active layer having a multiple quantum well structure to make the amount of light oozing out of the active layer large. CONSTITUTION:On an N-type GaAs substrate 1, a first clad layer 2 comprising N-type Al0.45Ga0.55As is grown. Then, on said first clad layer 2, GaAs layers and Al0.3Ga0.7As layers are alternately laminated and an active layer 3' is formed. At this time, five GaAs layers are used and four Al0.3Ga0.7As layers are used. The active layer 3' formed in this way has a multiple quantum well structure. Then, on the active layer 3' a second clad layer 4 comprising P-type Al0.45Ga0.55As is grown. A current narrowing layer 5 comprising an N-type GaAs is grown. Thereafter, a stripe groove is formed by a PEP process. Then, a lightguide layer 6 comprising P-type Al0.35Ga0.65As is grown. Then, a third clad layer 7 comprising P-type Al0.45Ga0.55As and a contact layer 8 comprising P-type GaAs are sequentially grown, and a laser device is obtained. |
| 公开日期 | 1987-04-08 |
| 申请日期 | 1985-09-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74162]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | MATSUURA NOBUYUKI. Semiconductor laser device. JP1987076692A. 1987-04-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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