Semiconductor light emitting element
文献类型：专利
| 作者 | UMEO ITSUO; AKITA KENZOU |
| 发表日期 | 1982-12-06 |
| 专利号 | JP1982198687A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element |
| 英文摘要 | PURPOSE:To improve light emitting efficiency by arranging a high resistance layer on both sides of a stripe shaped active layer which is a light emitting layer and in the vicinity of said active layer, and effectively flowing a current supplied from a power source to the active layer. CONSTITUTION:In an N type InP substrate 101, a groove, wherein the width corresponding to a light emitting stripe width is 2-3mum and the depth is about 2.5mum is formed by supplying a desired photolithography technology and an etching technology. Then, an N type InGaAsP layer 102 and a N type InGaAsP active layer 103 are embedded so that the thickness of the layered body becomes 0.2mum in the groove by a liquid phase epitaxial technology. On the surface of substrate which surrounds the layers 102 and 103 so that the substrate is protruded, a layer 105 having the same composition as that of the layer 102 and the layer 106 having the same composition as that of the layer 103 are grown. Thereafter, a P type InGaAsP clad layer 107 and a P InGaAsP layer 108 are grown on the entire surface so as to bury the groove. H ions are implanted through said layered body, and an N type high resistance layer 104 of about 10OMEGA.cm is formed at the surface layer part of the substrate 101 surrounding the active layer 103. |
| 公开日期 | 1982-12-06 |
| 申请日期 | 1981-06-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74166]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | UMEO ITSUO,AKITA KENZOU. Semiconductor light emitting element. JP1982198687A. 1982-12-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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