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文献类型:专利
作者 | MATSUDA KENICHI; ODANI JUN; FUJITA TOSHIHIRO; SERIZAWA AKIMOTO |
发表日期 | 1993-05-07 |
专利号 | JP1993030313B2 |
著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
国家 | 日本 |
文献子类 | 授权发明 |
其他题名 | - |
英文摘要 | PURPOSE:To contrive the stable and facile constitution by the long-range views and to prevent the deterioration of a quality of signals by providing a semiconductor laser having an effect of restraining a variation of an oscillation frequency consequent on the modulation of strength, a multi-mode fiber, and a detector. CONSTITUTION:On an N-type InP substrate 1, an N-type InGaAsP light waveguide layer 2 (band gap Eg=18eV) is formed and on the light waveguide layer 2, an N-type InP isolation layer 3, an active layer 4 (Eg=0.95eV), a P-type InP enclosure layer 5, an electrode 6, and an electrode 7 are formed thereby constituting a semiconductor laser part 8. The light waveguide and the isolation layer 3 are constituted as a light waveguide part 9 in the part except the semiconductor laser part 8. A semiconductor laser 13 is composed of resonator planes 10-12 and the light emitted from the semiconductor laser 13 is connected with a multi-mode fiber 14 as a light transmission path and is accepted by a detector 15. Then the device for transmission of optical signals which effects the modulation of current with analog signals is constituted between the electrodes 7 of the semiconductor laser 13. |
公开日期 | 1993-05-07 |
申请日期 | 1985-02-18 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/74168] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
推荐引用方式 GB/T 7714 | MATSUDA KENICHI,ODANI JUN,FUJITA TOSHIHIRO,et al. -. JP1993030313B2. 1993-05-07. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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