Manufacture of semiconductor laser device
文献类型：专利
| 作者 | WADA MASARU; ITOU KUNIO; HAMADA TAKESHI; SHIMIZU YUUICHI; SUGINO TAKASHI |
| 发表日期 | 1985-10-25 |
| 专利号 | JP1985213072A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a vertical flat cavity surface by removing one part of a cap layer, forming a mask with an opening end in the direction onto a clad layer and shaping the cavity surface through etching passing through an opening section. CONSTITUTION:An N type GaAlAs clad layer 2, a GaAs active layer 3, a P type GaAlAs clad layer 4 and a P type GaAs cap layer 5 are grown continuously on an N type GaAs 100 substrate A striped photo-mask 6 is formed along the direction, and only the GaAs cap layer 5 is etched selectively through the mask. The resist 6 is removed, a striped photo-mask 6 is shaped on the exposed clad layer 4 along the direction, and section up to the substrate 1 are etched through the mask. Accordingly, end surfaces as cavity surfaces are vertical to a P-N junction surface, and flat mirror surfaces are obtained. |
| 公开日期 | 1985-10-25 |
| 申请日期 | 1984-04-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74170]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | WADA MASARU,ITOU KUNIO,HAMADA TAKESHI,et al. Manufacture of semiconductor laser device. JP1985213072A. 1985-10-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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