Semiconductor laser device
文献类型：专利
| 作者 | SUHARA MOTOI; TAMURA HIDEO; KURIHARA HARUKI |
| 发表日期 | 1985-08-03 |
| 专利号 | JP1985147187A |
| 著作权人 | TOSHIBA KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To lower a noise level by a single longitudinal mode, and to improve linearity in current-optical output characteristics by forming a rectangular groove reaching to a semiconductor substrate to a semiconductor layer containing a current stopping layer having a conduction type different from the semiconductor substrate and hanging down an active layer into the groove in curved manner. CONSTITUTION:First semiconductor layer 31, such as an N-GaAs current stopping layer 32, an Al0.45Ga0.55As layer 33 having not less than 0.1 AlAs concentration and a GaAs layer 34 are grown on a semiconductor substrate 30 such as a P-GaAs substrate having a face orientation {100} in succession, and a rectangular groove 35 reaching to the semiconductor substrate 30 is formed at the central section of the first semiconductor layers 31 through anisotropic etching using Cl2 gas. A second semiconductor layer 35 such as a P-Al0.45Ga0.55 clad layer, an active layer 37 such as an un-doped Al0.13Ga0.87As active layer and third semiconductor layers 38, such as an N-Al0.45Ga0.55As clad layer 39 and an N-GaAs contact layer 40 are grown on the first semiconductor layers 31 and the exposed semiconductor substrate 30 so as to coat the groove 35, and lastly an N side electrode 41 is formed at an end on the third semiconductor layer 38 side and a P side electrode 42 at an end of the semiconductor substrate 30 side, thus completing a semiconductor laser device. |
| 公开日期 | 1985-08-03 |
| 申请日期 | 1984-01-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74172]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA KK |
| 推荐引用方式 GB/T 7714 | SUHARA MOTOI,TAMURA HIDEO,KURIHARA HARUKI. Semiconductor laser device. JP1985147187A. 1985-08-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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