-
文献类型：专利
| 作者 | KANEIWA SHINJI; KUDO HIROAKI; MATSUI KANEKI; TAKIGUCHI HARUHISA; YOSHIDA TOMOHIKO |
| 发表日期 | 1992-07-30 |
| 专利号 | JP1992046477B2 |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To reduce reactive currents flowing into an optical guide layer by inserting a GaAlAs group or InGaPAs group barrier layer between a GaAlAs group or InGaPAs group active layer for oscillating a laser and the InGaPAs optical guide layer, to which a diffraction grating is formed, adjoined to the active layer. CONSTITUTION:An N-type GaAlAs clad layer 2, a non-doped GaAs active layer 3, a P-type GaAlAs barrier layer 9, and a P-type InGaPAs optical guide layer 4 are grown continuously on an N-type GaAs substrate 1 through a liquid-phase epitaxial growth method. A P-type GaAlAs clad layer 5 and a P-type GaAs cap layer 6 are grown on the optical guide layer 4 with the diffraction grating in succession through the same growth method, and N side and P side ohmic electrodes 7, 8 consisting of Au/Ge/Ni and Au/Zn are each shaped onto the substrate 1 and the cap layer 6, thus forming double hetero-junction structure. The barrier layer 9 is composed of Ga1-xAlxAs (0.2<=x<1), and forbidden band width is set at a value larger than the active layer 3 and the optical guide layer 4 and a refractive index at a value smaller than them. Accordingly, reactive carriers flowing into the optical guide layer from the active layer are reduced, thus acquiring a distributed feedback type or distributed Bragg-reflector type semiconductor laser element having excellent element characteristics, particularly, temperature characteristics. |
| 公开日期 | 1992-07-30 |
| 申请日期 | 1985-12-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74174]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | KANEIWA SHINJI,KUDO HIROAKI,MATSUI KANEKI,et al. -. JP1992046477B2. 1992-07-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。