Semiconductor laser diode
文献类型：专利
| 作者 | HORIE, HIDEYOSHI; FUJIMORI, TOSHINARI; NAGAO, SATORU; GOTO, HIDEKI |
| 发表日期 | 2001-01-09 |
| 专利号 | US6172998 |
| 著作权人 | MITSUBISHI CHEMICAL CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser diode |
| 英文摘要 | The present invention relates to a semiconductor laser diode comprising a GaAs substrate and at least a first conduction-type clad layer, an active layer containing In, Ga and As as component elements, a second conduction-type first clad layer, a current block layer and a second conduction-type second clad layer which are deposited on the substrate in order, wherein a current injection region is formed by said current block layer and said second conduction-type second clad layer, the effective refractive index step DELTAneff in the horizontal direction is from 2.5x10-3 to 5.0x10-3 at the emission wavelength, and the width W of the current injection region is from 5 to 2.5 mum. The semiconductor laser diode of the present invention is suited for uses where high output and long life-time are required, such as excitation light source for optical fiber amplifiers. |
| 公开日期 | 2001-01-09 |
| 申请日期 | 1997-11-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74176]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI CHEMICAL CORPORATION |
| 推荐引用方式 GB/T 7714 | HORIE, HIDEYOSHI,FUJIMORI, TOSHINARI,NAGAO, SATORU,et al. Semiconductor laser diode. US6172998. 2001-01-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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