Semiconductor light emitting element
文献类型：专利
| 作者 | YOSHIDA ICHIRO |
| 发表日期 | 1991-12-02 |
| 专利号 | JP1991270186A |
| 著作权人 | SUMITOMO ELECTRIC IND LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element |
| 英文摘要 | PURPOSE:To inhibit the heat generation of a semiconductor light emitting ele ment without deteriorating the operating characteristic, such as oscillation characteristic by lowering a doping density in a part near an activation layer of an n-type clad layer than a doping density in a part separated from the activation layer of the n-type clad layer. CONSTITUTION:An n-type substrate side clad layer 3, an activation layer 4 which has a small band gap at a higher refractive index than the clad layer 3, and a p-type upper side clad layer at a lower refractive index than the clad layer 4 are successively deposited on an n-type substrate provided with an electrode on the back side. The substrate side clad layer 3 reduces the doping density near the activation layer 4. For example, the density of the section near the activation layer is around 1X10 to 1X10cm while the density of the section separated the farthest from the activation layer is around 5X10 to 1X10cm. In this manner, it is possible to prevent the deterioration of crystallinity of AlGaInP which is used as the clad layer by lowering the doping density of the cad layer near the activation layer 4. As a result, it is possible to prevent the deterioration of oscillation characteristic of semiconductor laser elements. |
| 公开日期 | 1991-12-02 |
| 申请日期 | 1990-03-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74202]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC IND LTD |
| 推荐引用方式 GB/T 7714 | YOSHIDA ICHIRO. Semiconductor light emitting element. JP1991270186A. 1991-12-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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