Semiconductor laser element and manufacture thereof
文献类型：专利
| 作者 | TSUNEKANE MASAKI |
| 发表日期 | 1991-04-05 |
| 专利号 | JP1991080589A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and manufacture thereof |
| 英文摘要 | PURPOSE:To achieve a high productivity and yield with a small number of growth times and obtain an element which operates stably at high output by enabling a mesa to be cut off near the end face of at least one resonator and preventing current to be injected near the front face and the end face. CONSTITUTION:An n-type aluminum gallium arsenic clad layer 2 with different aluminum composition and an aluminum gallium arsenic active layer 3 are uniformly formed on an n-type gallium arsenic substrate 1 and then a mesa is formed at one part of a p-type aluminum gallium arsenic clad layer 4 on it. A p-type gallium arsenic cap layer 5 is formed at the upper part of this mesa, which is allowed to contact a p electrode 50, and an n-type gallium arsenic current constriction layer 10 is uniformly embedded at a region without mesa, thus eliminating mesa structure at the end face of a laser resonator which is away by a specific distance in longer direction from both edges of mesa and forming a structure where no current is directly injected to the end face by the current constriction layer 10. |
| 公开日期 | 1991-04-05 |
| 申请日期 | 1989-08-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74206]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | TSUNEKANE MASAKI. Semiconductor laser element and manufacture thereof. JP1991080589A. 1991-04-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。