半導体レーザ素子
文献类型：专利
| 作者 | 山本 三郎; 細田 昌宏; 佐々木 和明; 近藤 正樹 |
| 发表日期 | 1994-10-12 |
| 专利号 | JP1994080869B2 |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ素子 |
| 英文摘要 | PURPOSE:To simplify a manufacturing process and improve a yield, by forming two parallel stripe trenches having a predetermined width on both sides of a mesa part of a semiconductor laser element, removing a double heterojunction structure in that part and burying and growing an element in an exposed substrate with a cap layer of the mesa part removed. CONSTITUTION:An n-Ga0.5Al0.5As clad layer 2, a Ga0.85Al0.15As active layer 3, a p-Ga0.5Al0.5As clad layer 4 and a p-GaAs cap layer 5 are grown on a GaAs substrate 1 with a V-channel 13 formed in a forward mesa direction of a semiconductor laser element. A resist is applied to the surface of this layer 5 and parallel stripe windows 21 are opened on both ends of the V-channel. Etching is performed until it reaches the substrate by using these windows to form parallel stripe trenches 14. A GaAs cap layer 16 of a mesa surface 15 is removed and finally the resist is removed. Then, a first buried resist layer 6 of p-Ga0.15Al0.85As and a second buried layer 7 of n-Ga0.4Al0.6As are formed. |
| 公开日期 | 1994-10-12 |
| 申请日期 | 1987-12-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74208]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | 山本 三郎,細田 昌宏,佐々木 和明,等. 半導体レーザ素子. JP1994080869B2. 1994-10-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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