Semiconductor laser device
文献类型：专利
| 作者 | HORIUCHI SHIGEKI; YAGI TETSUYA; OTA YOICHIRO |
| 发表日期 | 1989-05-16 |
| 专利号 | JP1989123492A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device of high performance excellent in frequency response characteristics, by using a semiinsulative GaAs layer as a current blocking layer, blocking the current to parts except a ridge part by the effect of insulating property of the blocking layer itself, and preventing leak current. CONSTITUTION:When a bias voltage is so applied between a P-side electrode 9 and an N-side electrode 8 that the P-side electrode 9 becomes positive, current does not flow in a region where a semiinsulative GaAs current blocking layer interposes between the electrodes 9, 8, and current flows only in a ridge part 7. As the injection current is increased, stimulated emission begins and reaches laser oscillation. In the vertical direction of a device, the laser light is confined, by the effect of difference of real refractive indexes between an active layer 3 and a first and a second clad layers 2, 4. As a result, the leak current caused by the deterioration of a P-N junction is prevented. Thereby obtaining a semiconductor laser device of high performance excellent in frequency response characteristics. |
| 公开日期 | 1989-05-16 |
| 申请日期 | 1987-11-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74212]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | HORIUCHI SHIGEKI,YAGI TETSUYA,OTA YOICHIRO. Semiconductor laser device. JP1989123492A. 1989-05-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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