Semiconductor laser element
文献类型：专利
| 作者 | YAMAMOTO SABURO; MORIMOTO TAIJI; SASAKI KAZUAKI; KONDO MASAKI; SUYAMA NAOHIRO; KONDO MASAFUMI |
| 发表日期 | 1990-03-20 |
| 专利号 | JP1990079486A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To provide a semiconductor laser element suitable for a video disc light source, which has a low threshold current, is oscillative with stable fundamental cross mode, and with low noise, by pinching a striped current injection layer by embedding layers with light absorptiveness and current checking property, and installing this on a double hetero structure or a quantum well structure, wherein the current injection layer has a smaller width than the named structure. CONSTITUTION:A current injection layer 15 of this semiconductor laser is embedded in the center of a p-clad layer 14 by a fourth buried layer 18 self-aligningly in stripes, wherein the width W is very small. As the current injection layer 15 is installed in an active layer 13 pinching only the p-clad layer 14, the current injected from the current injection layer 15 pinched by the fourth buried layer 18 to check current supply has small expansion of currents in the sideways direction in the p-clad layer 14, which allows lowering of the threshold current. Part of the light generated in the active layer 13 leaks out to the clad layers 12, 14 pinching the active layer 13, but because the p-clad layer 14 is thin, the leaked light on the sides of the injection layer 15 is absorbed in the fourth buried layer 18 put on the p-clad layer 14. This sinks the sensitivity for the return light from an optical system coupled, which accomplishes low noise. |
| 公开日期 | 1990-03-20 |
| 申请日期 | 1988-09-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74231]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | YAMAMOTO SABURO,MORIMOTO TAIJI,SASAKI KAZUAKI,et al. Semiconductor laser element. JP1990079486A. 1990-03-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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