Semiconductor laser
文献类型：专利
| 作者 | TAMURA AKIYOSHI; KONUMA TAKESHI |
| 发表日期 | 1983-06-25 |
| 专利号 | JP1983106885A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To relax the dispersion of threshold currents by changing the width of an active layer by applied voltage from the outside. CONSTITUTION:The n type active layer 3 having laser gains, a p type clad layer 2 for confining carriers injected and laser beam and an n type clad layer 4 are formed to a p type semiconductor substrate An impurity such as Zn is diffused as shown in a region 8 up to the deep position of the active layer 3 as much as possible so as not to reach the clad 2, and the region is inverted into p type to a p type clad layer 4' and the p type active layer 3' respectively. When ohmic electrodes 5, 6, 7 are formed to the p type substrate 1, the p type clad layer 4' and the n type clad layer 4 and forward bias is applied between the electrodes 5, 7, currents are confined because of different conduction type among the clad layers 4, 4' and the active layers 3, 3'. When reverse bias is applied between the electrodes 6, 7, a depletion layer is extended because a p-n junction is shaped between the active layers 3, 3', and the width of the active layers can be reduced. |
| 公开日期 | 1983-06-25 |
| 申请日期 | 1981-12-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74243]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | TAMURA AKIYOSHI,KONUMA TAKESHI. Semiconductor laser. JP1983106885A. 1983-06-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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