Semiconductor laser device
文献类型：专利
| 作者 | IWAMURA HIDETOSHI; UENOHARA HIROYUKI; MIYAZAWA TAKEO; NAGANUMA MITSURU |
| 发表日期 | 1991-10-24 |
| 专利号 | JP1991239385A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To make it possible to control an oscillation state with voltage or a light inlet signal by separating electrodes into two or more in a high resistance region, injecting electric current by way of one or more segment electrodes and applying voltage by way of one segment electrodes. CONSTITUTION:An N type semiconductor substrate 1 is provided with a semiconductor laminated layer 6 where an N type semiconductor layer 2 which serves as a clad layer, a semiconductor layer 3 which serves as a superlattice structural layer, a P type semiconductor 4, and a P type semiconductor layer 5 which has high conductivity and forms a metal and ohmic alloy layer are laminated thereon in this order. The semiconductor laminated layer 6 is provided with an electrode 7 connected with an N type semiconductor substrate 1 for current injection and an electrode metal layer 8 connected with the P type semiconductor layer 5. It further divides the semiconductor layers 4 and 5 and the electrode metal layer 8 into two and more segments electrically separated and applies a constant voltage source 23 to the segment of one party and a constant current source 16 to the segment 15 of the other party. The constant voltage 23 forms a partially mixed crystal of a superlattice section of a voltage-applied saturable absorption region 21, thereby controlling an oscillation state with voltage or a light input signal. |
| 公开日期 | 1991-10-24 |
| 申请日期 | 1990-02-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74245]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | IWAMURA HIDETOSHI,UENOHARA HIROYUKI,MIYAZAWA TAKEO,et al. Semiconductor laser device. JP1991239385A. 1991-10-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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