半導体レ-ザの製造方法
文献类型：专利
| 作者 | 虫上 雅人; 田中 治夫; 深田 速水 |
| 发表日期 | 1994-11-24 |
| 专利号 | JP1994095583B2 |
| 著作权人 | ロ-ム株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザの製造方法 |
| 英文摘要 | PURPOSE:To contrive the improvement of current conductivity by improving the lamination of the second grown layer by a method wherein the Al composition of the first upper clad layer of an AlGaAs series semiconductor layer produced by an MBE device is set at less than a specific value. CONSTITUTION:In the first growing process, the lower clad layer 21, an active layer 22, the first upper clad layer 3 made of AlxGa1-xAs an active layer 22, the first upper clad layer 23 made of AlxGa1-xAs with the Al composition set at x<0.4, a light absorption layer 24 made of GaAs, and an evaporation preventing layer 25 are laminated on the surface of a semiconductor substrate 10. Next, a stripe groove 30 deep enough to reach the first upper clad layer 23 and with a desired width is formed by the photoetching process; thereafter, the impurity deposited by said photoetching is evaporated by thermal cleaning, thus carrying out the second growth. This manner can improve the current conductivity of the second grown layer 40 by improving the lamination of the layer 40. |
| 公开日期 | 1994-11-24 |
| 申请日期 | 1984-08-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74250]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ロ-ム株式会社 |
| 推荐引用方式 GB/T 7714 | 虫上 雅人,田中 治夫,深田 速水. 半導体レ-ザの製造方法. JP1994095583B2. 1994-11-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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