Semiconductor device and manufacture thereof
文献类型：专利
| 作者 | ISHIKAWA HIDEAKI; MIYAUCHI EIZO; FUJII TOSHIO |
| 发表日期 | 1990-03-28 |
| 专利号 | JP1990087646A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device and manufacture thereof |
| 英文摘要 | PURPOSE:To simplify isolation of an element and a passivation manufacturing process on the side of the element and to reduce damage of the element caused by a manufacturing process by a method wherein a recessed part in a semiinsulating compound semiconductor substrate is filled with a compound semiconductor layer of a laminated structure and this constitutes the element. CONSTITUTION:A protective film 14 having a window 14a is formed on a semiinsulating compound semiconductor substrate 11; by an etching operation using the protective film 14 as a mask, a recessed part 15 whose bottom 15a is as wide as or wider than the window 14a is formed in the substrate 1 A compound semiconductor layer 13 of a laminated structure is grown in the recessed part 15 by molecular beam epitaxy using an organic metal gas as a molecular beam in a state that the substrate 11 is provided with the protective film 14. |
| 公开日期 | 1990-03-28 |
| 申请日期 | 1988-09-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74253]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | ISHIKAWA HIDEAKI,MIYAUCHI EIZO,FUJII TOSHIO. Semiconductor device and manufacture thereof. JP1990087646A. 1990-03-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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