Semiconductor laser
文献类型：专利
| 作者 | SHIMA KATSUTO |
| 发表日期 | 1986-12-03 |
| 专利号 | JP1986272990A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To form an effective optical waveguide with excellent reproducibility by applying a first semiconductor layer and a second semiconductor layer onto an active layer, removing one part of the second semiconductor layer to shape a groove and applying a third semiconductor layer while covering the groove. CONSTITUTION:A first layer 1 consisting of Ga1-xAlxAs as a clad layer, a second layer 2 composed of Ga4d1-yAlyAs as an active layer, a third layer 3 consisting of Ga1-zAlz as a clad layer, a fourth layer 4 composed of Ga1-aAlaAs, and a fifth layer 5 consisting of Ga1-bAlbAs as a growth promoting layer are grown onto a substrate 11 in succession. One parts of the fifth layer 5 and the fourth layer 4 are removed until the third layer 3 is exposed to shape a groove 8. A sixth layer composed of Ga1-cAlcAs as a third semiconductor layer is grown as a clad layer while coating the groove 8, where the mixing ratio of A4l is represented by y=0.45>=z, a>c and the mixing ratio of the fifth layer 5 is represented by 0.2>=b>=0. |
| 公开日期 | 1986-12-03 |
| 申请日期 | 1985-05-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74266]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | SHIMA KATSUTO. Semiconductor laser. JP1986272990A. 1986-12-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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