Manufacture of semiconductor laser
文献类型：专利
| 作者 | SHAKUDA YUKIO; TANAKA HARUO; MUSHIGAMI MASAHITO; KUSUNOKI KAORU; IGAWA KATSUHIKO; ISHIDA YUJI |
| 发表日期 | 1988-09-16 |
| 专利号 | JP1988222488A |
| 著作权人 | ROHM CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To reduce a gap between a current blocking region and an active layer, by forming the current blocking region by ion implantation of impurities or the like at an intermediate stage before forming an upper clad layer and a cap layer having fixed thicknesses. CONSTITUTION:An n-type AlGaAs lower part clad layer 2, an AlGaAs active layer 3, an upper first clad layer 4 of a p-type AlGaAs and a GaAs protective layer 5 are by turns epitaxially grown on an n-type GaAs substrate Next, a stripe part 4a is formed in the depth not reaching the lower clad layer 2 from the surface by ion implantation or diffusion. In this way, an n-type current blocking region 4b and a stripe part 4a are formed on the upper first clad layer 4. In this constitution, thickness of the stripe part 4a can be formed with high dimension accuracy so as to reduce a gap (t) between the active layer 3 and the current blocking layer 4b. |
| 公开日期 | 1988-09-16 |
| 申请日期 | 1987-03-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74269]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ROHM CO LTD |
| 推荐引用方式 GB/T 7714 | SHAKUDA YUKIO,TANAKA HARUO,MUSHIGAMI MASAHITO,et al. Manufacture of semiconductor laser. JP1988222488A. 1988-09-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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