Semiconductor laser element
文献类型：专利
| 作者 | YAMAMOTO SABURO; SASAKI KAZUAKI; KONDO MASAKI; SUYAMA NAOHIRO; KONDO MASAFUMI |
| 发表日期 | 1990-11-20 |
| 专利号 | JP1990283083A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To provide a semiconductor laser element having low noise characteristic, low oscillation threshold value current for generating a self-excited oscillation by providing high resistance buried layers on both side faces of a stripelike first mesa including an active region, and light absorption layers at both sides of a stripelike second mesa to become a current injection path. CONSTITUTION:A substrate 1 of a semiconductor laser element does not have a groove, but is formed with crystalline layers 10 used to absorb a light of an active layer 3 immersed through a clad layer 4 and to stop a current at both sides of a current injection stripe mesa 14. With the element of such a configuration, the current injection inner stripe 14 is formed in a self-alignment manner with the center on the surface of a mesa stripe 15, and its width (w) can be very narrowed to approx. 1mum by selectively etching from both sides. Further, since the stripe 14 is formed directly above the layer 4, a current extension to the layer 3 can be reduced. |
| 公开日期 | 1990-11-20 |
| 申请日期 | 1989-01-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74313]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | YAMAMOTO SABURO,SASAKI KAZUAKI,KONDO MASAKI,et al. Semiconductor laser element. JP1990283083A. 1990-11-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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