Semiconductor laser element
文献类型：专利
| 作者 | MAKINO TOSHIHIKO |
| 发表日期 | 1990-06-01 |
| 专利号 | JP1990143580A |
| 著作权人 | 古河電気工業株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain a DFB type semiconductor laser element whose threshold current is small and oscillation spectrum is narrow by a method wherein a quantum well structure locally grown is provided to at least either the crest or the trough of a grating in an active region. CONSTITUTION:An n-InP layer 12 and a GaxIn1-xAsyP1-y layer 13 are successively formed on an n-InP substrate 11 to form a first clad layer, a grating 15 is provided to the GaxIn1-xAsyP1-y layer 13 through an interference exposure method and an etching, a quantum well line 14 of Gax.In1-x.As is grown on the crests and the troughs of the grating 15, furthermore a Gax'In1x'Asy'P1-y' layer 16, a p-InP layer 17, and a p-GaInAsP contact layer 20 are successively grown to form a second clad layer, and a p-electrode 18 and an n-electrode 19 are evaporated. The thickness of the quantum well line 14 is made equal to or less than 200Angstrom in the direction of X, and the line 14 is localized at the crests and the troughs of the grating 15 in the direction of Z, so that the quantum well line 14 is made to have a carrier trapping effect in two-dimensions X-Y. |
| 公开日期 | 1990-06-01 |
| 申请日期 | 1988-11-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74315]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 古河電気工業株式会社 |
| 推荐引用方式 GB/T 7714 | MAKINO TOSHIHIKO. Semiconductor laser element. JP1990143580A. 1990-06-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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