Semiconductor luminous device
文献类型：专利
| 作者 | SODA HARUHISA; KOTAKI YUJI |
| 发表日期 | 1989-04-24 |
| 专利号 | JP1989106488A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor luminous device |
| 英文摘要 | PURPOSE:To reduce leakage current and to improve luminous efficiency and maximum light output by providing an active layer which was formed on semiconductor substrate, a buffer layer on it, and an embedding layer consisting of mesa part and semi-insulation substance covering the side surface of mesa part. CONSTITUTION:An active layer 2 of GaInAsP is formed on the entire surface. Thus, voltage applied to a semi-insulation InP embedding layer 7 along the leak current path becomes a voltage between a p-type InP clad layer 5 and a GaInAsP active layer 2. Therefore, since nearly entire voltage applied between a p-side electrode 9 and a n-side electrode 10 is applied between the p-n junction (junction between an active layer 2 and an n-type InP substrate or the active layer 2 in put into p-type due to oozing of p-type impurities from a p-type InP buffer layer 3 etc.), voltage applied to a semiconductor InP embedding layer 7 becomes approximately 0.2V if a voltage of 5V is applied between the p-side electrode 9 and the n-side electrode 10. Thus, concentration of electric field to a semi-insulation InP embedding layer 7 is relaxed, leak current can be reduced, and the maximum light output can be increased. |
| 公开日期 | 1989-04-24 |
| 申请日期 | 1987-10-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74319]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | SODA HARUHISA,KOTAKI YUJI. Semiconductor luminous device. JP1989106488A. 1989-04-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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