Semiconductor laser device
文献类型：专利
| 作者 | KAKIMOTO SHOICHI; WATANABE HITOSHI; TAMATOSHI KUNIYOSHI |
| 发表日期 | 1992-08-26 |
| 专利号 | JP1992238308A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To convert laser beams connected with an optical fiber into beams low in strain in the semiconductor laser device comprising the semiconductor laser emitter and optical parts and connecting the laser beams emitted from this emitter with the optical fiber. CONSTITUTION:A slit 6 is formed in an optical passage between the semiconductor laser emitter 1 and the optical fiber 5, the component of the laser beams corresponding to the part large in the radiation enlarging angle in the direction in parallel to the epitaxial growth layer junction face is interrupted, and only the beams low in strain is condensed. |
| 公开日期 | 1992-08-26 |
| 申请日期 | 1991-01-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74324]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KAKIMOTO SHOICHI,WATANABE HITOSHI,TAMATOSHI KUNIYOSHI. Semiconductor laser device. JP1992238308A. 1992-08-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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