Semiconductor laser device
文献类型：专利
| 作者 | MAMINE TAKAYOSHI |
| 发表日期 | 1983-05-02 |
| 专利号 | JP1983073177A |
| 著作权人 | SONY KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To facilitate formation of resonance faces, and to simplify the manufacturing process of semiconductor laser by a method wherein a lattice type crystal growth obstructing layer is formed on one main face of a semicnductor substrate, and crystal growth layers are formed on the main face excluding the obstructing layer thereof. CONSTITUTION:An insulating layer is formed by adhesion on the whole surface of a compound semiconductor substrate 1 (N type GaAs), selective etching is performed according to the photolithography method to form a lattice type crystal growth obstructing layer 2, and crystal growth layers are formed in separated parts 7 excluding the obstructing layer 2 thereof. The direction of the obstructing layer 2 thereof extending in a lattcie type is selected as to make resonance faces of laser elements to be formed afterward to become as the (110) face. Then the crystal growth layers 3-6 are formed in order only in the separated parts 7 according to the normal liquid phase epitaxial growth method. After epitaxial growth is completed, chips formed in a pellet type are formed in the separated parts 7, and at the same time, the resonance faces 8 of mutually facing edge faces are formed along the edge sides of the obstructing layer 2 of the respective chip parts to simplify the manufacturing process of semiconductor laser. |
| 公开日期 | 1983-05-02 |
| 申请日期 | 1981-10-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74329]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY KK |
| 推荐引用方式 GB/T 7714 | MAMINE TAKAYOSHI. Semiconductor laser device. JP1983073177A. 1983-05-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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