Semiconductor laser
文献类型：专利
| 作者 | SAKANO SHINJI; OKA SATOHIKO; KAYANE NAOKI; OKAI MAKOTO |
| 发表日期 | 1990-09-20 |
| 专利号 | JP1990238686A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To enable a wide wavelength range to be covered continuously by providing electrodes for three active regions including a first active layer for radiating light, a phase adjusting region including a light-conductive path layer which is inactive optically, and an amplification region including a diffraction grating for reflecting light to be propagated. CONSTITUTION:The basic structure of a semiconductor laser is constituted by three regions, namely a brag reflection region 1 consisting of an optically active material 4 and having a light-conductive path being adjacent to a diffraction grating 12, a phase adjusting region 2 with a light-conductive path consisting of a material 5 with a shorter respiration edge wavelength than that of an active material, and an amplification region 3 with a light- waveleguide path consisting of the flat active material 4. Then, individually provided electrodes 21-23 are provided and carriers can be injected in to each light-waveguide path. Thus, it is possible to utilize a large change in refractive index near the absorption edge due to carrier injection, thus achieving a large wavelength variable width. |
| 公开日期 | 1990-09-20 |
| 申请日期 | 1989-03-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74356]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | SAKANO SHINJI,OKA SATOHIKO,KAYANE NAOKI,et al. Semiconductor laser. JP1990238686A. 1990-09-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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