Semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | WATANABE YUKIO; NITTA KOICHI; HATAGOSHI GENICHI |
| 发表日期 | 1990-08-08 |
| 专利号 | JP1990199889A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To control a beam radiating angle from a light emitting end face of a double hetero structure by allowing an active layer to protrude or retreat to a clad layer at the light emitting end face of the double hetero structure. CONSTITUTION:One of resonator end faces to become a light emitting end face of a general conventional buried type semiconductor laser is etched by using a SH etchant. As a result, an active layer 13 clad layers 12, 14 a current blocking layer 15 and a contact layer 16 are formed in a structure to protrude forward (light emitting direction) in this order. Thus, the active layer 13 protrudes to reduce the half value width of the emitting beam, and the radiating angle theta of an optical beam can be reduced. The beam radiating angle can be increased by rstreating the active layer instead of allowing the active layer to protrude with respect to the clad layer. |
| 公开日期 | 1990-08-08 |
| 申请日期 | 1989-01-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74359]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | WATANABE YUKIO,NITTA KOICHI,HATAGOSHI GENICHI. Semiconductor laser device and manufacture thereof. JP1990199889A. 1990-08-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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