Semiconductor laser element
文献类型：专利
| 作者 | SUYAMA NAOHIRO; KONDO MASAFUMI; SASAKI KAZUAKI; HOSODA MASAHIRO; TAKAHASHI KOUSEI; HAYAKAWA TOSHIRO |
| 发表日期 | 1990-07-11 |
| 专利号 | JP1990178989A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To reduce an oscillation threshold current and an astigmatic difference and to decrease noises by forming a ridge region in a 2-stage structure consisting of a ridge and a current injection path formed on the ridge, and making the width of the ridge larger than that of the current injection path. CONSTITUTION:A ridge region is formed in a 2-stage structure having a ridge 12 and a current injection path 13 formed on the ridge 12, and the width W1 of the ridge 12 is larger than the width W2 of the current injection path 13. Thus, since the ridge 12 having a second clad layer 7 of the thickness adapted for a self-excited oscillation is excited near the gain region of an active layer 5, the distribution of the light generated from the current injection path 13 is suitably extended. Since the width W1 of the ridge 12 is larger than the width W2 of the current injection path 13, the distribution of the light can be made larger than the width of the active layer 5 to which a current is injected. Since the thickness of the second clad layer 7 is thin outside the ridge 12, an equivalent refractive index difference between the inside and the outside of the ridge 12 is increased. Thus, an oscillation threshold current, an astigmatic difference can be reduced, and noises can be decreased. |
| 公开日期 | 1990-07-11 |
| 申请日期 | 1988-12-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74369]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | SUYAMA NAOHIRO,KONDO MASAFUMI,SASAKI KAZUAKI,et al. Semiconductor laser element. JP1990178989A. 1990-07-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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