Semiconductor light-emitting device
文献类型：专利
| 作者 | KOTAKI YUJI |
| 发表日期 | 1988-11-09 |
| 专利号 | JP1988272088A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To decrease a substrate's occupation area required for one element so as to reduce its manufacturing cost, by interposing a buried electrode between an active layer and an optical waveguide layer and making an active current and a resonance frequency controlling current, which performs variable control of the resonance frequency by changing a refractive index of the optical waveguide layer on a diffraction grating, independently flow toward the buried electrode. CONSTITUTION:This device is composed of the following parts: a first electrode 1, a diffraction grating 2 which is formed on the first electrode 1 through a semiconductor substrate 7, an optical waveguide layer 3 which is formed on the diffraction grating 2, a buried electrode 4 which is formed on the optical waveguide layer 3 and made of a light transmissive material, an active layer 5 which is formed on the buried electrode 4, and a second electrode 6 which is formed on the active layer 5 through a semiconductor layer 8. An active current, which flows across the active layer 5 from the second electrode 6 to the buried electrode 4, is used to emit light from the active layer 5. A resonance frequency controlling current, which flows across the optical waveguide layer 3 formed on the diffraction grating 2 and flows from the first electrode 1 to the buried electrode 4, is used to change a refractive index of the optical waveguide layer 3 and perform variable control of the resonance frequency. |
| 公开日期 | 1988-11-09 |
| 申请日期 | 1987-04-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74380]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KOTAKI YUJI. Semiconductor light-emitting device. JP1988272088A. 1988-11-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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