Semiconductor laser device
文献类型：专利
| 作者 | SAKAKI SHIGEO |
| 发表日期 | 1983-04-07 |
| 专利号 | JP1983058785A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To use a stem as the cathode side by employing a sub-mount formed by an N type silicon board using one-part surface layer region as a P type. CONSTITUTION:A cathode lead 11 and an anode lead 12 are penetrated and fixed to the stem 1 through insulators 14, 13, and the sub-mount 3 is fastened at the center of the stem 1 through solder 2. With the submount 3, one part of the surface layer section of an upper surface has the N type silicon board with a P type resion 15, and a PN junction 17 exposed to the upper surface and an N type region are coated with an insulating film. A wiring layer 19 is shaped onto the P type region 15, and the anode electrode of a chip 4 is fixed onto the wiring layer 19 through solder 8. The wiring layer 19 and the anode lead 12 are connected by means of a wire 9, an a cathode electrode and the cathode lead 11 are connected by means of a wire 20. |
| 公开日期 | 1983-04-07 |
| 申请日期 | 1981-10-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74386]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | SAKAKI SHIGEO. Semiconductor laser device. JP1983058785A. 1983-04-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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