Semiconductor laser device
文献类型：专利
| 作者 | NAMISAKI HIROBUMI |
| 发表日期 | 1989-11-29 |
| 专利号 | JP1989295473A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain low threshold value and high output power, by making both ends of a stripe-type active layer forming a multilayer quantum well disorder by impurity, and arranging buried layers which sandwich them from both sides. CONSTITUTION:An active layer 3 is formed by a multilayer quantum well, and both ends of the buried active layer 3 is made disorder by impurity diffusion. Thereby, on both sides of said disorder active region 22, a region 10 whose refractive index is a little low is formed, and a buried layer 11 whose refractive index is further low is formed outside said region. That is, the light guides 10, 11 having a two-step distribution of refractive index are formed in the horizontal direction, and light propagates all over the two-step light guides 10, 1 Since the refractive index in the central part is high, higher modes difficult to exist. As a result, the width of the whole light guides 10, 11 can be increased, and so light distribution can be widened. Thereby, oscillation occurs at a low threshold value, and high output power can be led out. |
| 公开日期 | 1989-11-29 |
| 申请日期 | 1988-05-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74390]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | NAMISAKI HIROBUMI. Semiconductor laser device. JP1989295473A. 1989-11-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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