Semiconductor laser device
文献类型：专利
| 作者 | KOMORI HIROSHI; HAMADA TAKESHI; ITO KUNIO |
| 发表日期 | 1988-02-13 |
| 专利号 | JP1988033885A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To thin an active layer, holding the thickness of a P-type clad layer, and to increase an output by forming a groove at the center of a ridge in two- stage structure. CONSTITUTION:A P-type Al0.4Ga0.6As clad layer 3, an Al0.08Ga0.92As active layer 4, an N-type Al0.4Ga0.6As clad layer 5 and an N-type GaAs contact layer 6 are grown on a P-type GaAs substrate 1, a mesa 1a, an N-type GaAs current constriction layer 2 and ridges 2a, 2b in succession through a liquid growth method, and an N side electrode 7 and a P side electrode 8 are shaped through evaporation. Growth on the ridges 2a, 2b is inhitited as compared to the side surfaces of the ridges 2a, 2b by the anisotropy of crystal growth, and the P-type clad layer 3 is grown flatly extending over width W on the ridges 2a, 2b. Width W is narrowed when ridge width is narrowed at that time, but the thickness (t) of the P-type clad layer 3 on a flat section at the first stage of a groove 9 is hardly altered though width W is narrowed. When width W is brought to 80mum or less, an output can be increased by an effect in which the groove is formed at two stages. |
| 公开日期 | 1988-02-13 |
| 申请日期 | 1986-07-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74418]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | KOMORI HIROSHI,HAMADA TAKESHI,ITO KUNIO. Semiconductor laser device. JP1988033885A. 1988-02-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。