Manufacture of semiconductor laser
文献类型：专利
| 作者 | BAN YUZABURO; OGURA MOTOTSUGU |
| 发表日期 | 1989-05-12 |
| 专利号 | JP1989120085A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To simplify 4 process by a method wherein, while an n-type impurity raw material and a p-type impurity raw material are supplied simultaneously and a desired part is irradiated with a beam, a semiconductor layer is epitaxially grown on a second clad layer so that a structure identical to a structure after formation of a conventional Zn diffusion region can be formed by one epitaxial growth operation. CONSTITUTION:A first clad layer 2 whose conductivity type is identical to that of a substrate 1, an active layer 3 and a second clad layer 4 whose conductivity type is opposite to that of tbe substrate 1 are epitaxially grown on the semiconductor substrate 1 of a first conductivity type. Then, while an n-type impurity raw material and a p-type impurity raw material are supplied simultaneously and desired parts are irradiated with beams 11, semiconductor layers 5, 10 are epitaxially grown on the second clad layer 4. After that, a first electrode layer 8 is formed on the semiconductor layers 5, 10 and a second electrode layer 9 is formed on the rear of the semiconductor substrate For example, when an n-type GaAs layer 5 is to be grown, an n-type impurity raw material Si(CH3)4 and a p-type impurity raw material Zn(CH3)2 are supplied simultaneously and an ArF excimer laser beam 11 of a stripe-like pattern is irradiated simultaneously; a p-type layer 10 is formed in a non-irradiated part and an n-type layer 5 is formed in an irradiated part. |
| 公开日期 | 1989-05-12 |
| 申请日期 | 1987-11-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74436]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | BAN YUZABURO,OGURA MOTOTSUGU. Manufacture of semiconductor laser. JP1989120085A. 1989-05-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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