Manufacture of semiconductor light emitting device
文献类型：专利
| 作者 | IKEDA TOSHIYUKI |
| 发表日期 | 1986-09-30 |
| 专利号 | JP1986220494A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting device |
| 英文摘要 | PURPOSE:To suppress reactive current and to improve laser efficiency and temperature characteristics, by growing an InP layer on an InP substrate through a semiconductor layer comprising InGaAsP or InGaAs, forming a mesa structure from the two layers through a mask, and forming a reverse P-N junction in a region, which is not covered with the mask by etching. CONSTITUTION:On the (100) surface of an N-type InP substrate 1, an N-type confining layer 2, a non-doped InGaAsP active layer 3, and a P-type InP confining layer 4 are epitaxially grown. A stripe shaped mask 5 is provided in the direction on the layer 4. A mesa structure is formed by etching. With the layer 3 being made to remain at the outside, a P-type InP layer 6 and an N-type InP layer 7 are epitaxially grown, and the mesa structure is buried. Then, the mask 5 is removed, and a P type InGaAsP layer 8 is formed. A P-side electrode 9 and an N-side electrode 10 are formed on the semiconductor substrate. Cleavage is carried out, and the laser element is obtained. |
| 公开日期 | 1986-09-30 |
| 申请日期 | 1985-03-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74443]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | IKEDA TOSHIYUKI. Manufacture of semiconductor light emitting device. JP1986220494A. 1986-09-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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