Semiconductor laser device
文献类型：专利
| 作者 | TAKAHASHI KOUSEI; HAYAKAWA TOSHIRO; SUYAMA NAOHIRO; KONDO MASAFUMI |
| 发表日期 | 1989-01-17 |
| 专利号 | JP1989012592A |
| 著作权人 | シャープ株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To avoid the saturation of a light output caused by heat created during a continuous oscillation by a method wherein a semiconducter laser has a quantum well active layer which is advantageous to a high output operation because its driving current is low and the reflectivity of its front end surface is high and the reflectivity of its rear end surface is low and its resonator length L is selected so as to be 300mum |
| 公开日期 | 1989-01-17 |
| 申请日期 | 1987-07-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74453]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | シャープ株式会社 |
| 推荐引用方式 GB/T 7714 | TAKAHASHI KOUSEI,HAYAKAWA TOSHIRO,SUYAMA NAOHIRO,et al. Semiconductor laser device. JP1989012592A. 1989-01-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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