Semiconductor laser
文献类型：专利
| 作者 | KAJIMURA TAKASHI; TANAKA TOSHIAKI; OISHI AKIO; KONDO MASAHIKO |
| 发表日期 | 1990-09-25 |
| 专利号 | JP1990240988A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To contrive decrease in a series resistance and improvement in temperature characteristics and perform high output operation at a high temperature by using a p-type substrate that is made up by layers which contain a highly concentrated p-type impurities on a part or the whole surface of a substrate crystal. CONSTITUTION:Zn is diffused on the surface of a p-type GaAs substrate 1 and a p-type impurity highly concentrated layer 2 is formed. After that, a p-type Al0.25Ga0.25In0.5P clad layer 3, an In0.5Ga0.5P active layer 4, an n-type Al0.25Ga0.25 In0.5P clad layer 5, and an N-type GaAs cap layer 6 are formed by MOCVD. Subsequently, an SiO2 film 7 having a stripe groove is formed through photolithography and CVD processes. After forming an n-type electrode 8, a p-type electrode 9 is formed and laser chips are obtained by cleaving this member. Consequently, a p-type impurity concentration in a p-type clad layer of an AlInGaP system 0.6mum band laser is allowed to be highly concentrated easily after producing favorable control effect. Decrease in a series resistance as well as the overflow of injected carriers into a p-type clad layer 5 is achieved and high output operation of a laser at a high temperature is thus performed. |
| 公开日期 | 1990-09-25 |
| 申请日期 | 1989-03-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74465]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | KAJIMURA TAKASHI,TANAKA TOSHIAKI,OISHI AKIO,et al. Semiconductor laser. JP1990240988A. 1990-09-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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