Optical semiconductor device
文献类型：专利
| 作者 | HANATANI SHOICHI |
| 发表日期 | 1990-11-01 |
| 专利号 | JP1990267988A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical semiconductor device |
| 英文摘要 | PURPOSE:To achieve shortening of working time and improvement in yielding rate and contrive the decrease of production cost and improvement in reliability by forming a light modulation element on the surface of a semiconductor and integrating a semiconductor laser and a light modulator monolithicall. CONSTITUTION:This device is composed of: a semiconductor laser LD 91; a light modulation element 90; a higher-order diffraction grating region 6 which performs photocoupling; and an opening 12 through which modulated light is taken out from the light modulation element 90 to the outside. The LD 91 is composed of: an n type InP substrate 1; an InGaAs waveguide layer 2; an InGaAsP active layer 3; a p type InP clad layer 4; a p type InGaAsP cap layer 5; a p side electrode 13; an n side electrode 14; the higher-order diffraction grating region 6 for photocoupling. Subsequently, the light modulation element 90 is composed of: a p type InGaAsP layer 7; a p type InP layer 8; an InGaAsP layer 9; an n type InP layer 10; and an n side electrode 1 Further, the light modulation element 90 is an electric field absorption type light modulator having the InGaAsP layer 9 as an absorption layer. In this way, the decrease of a manufacturing cost and improvement in reliability are achieved by causing the LD, i.e. a light source, and the light modulation element to be integrated monolithically. |
| 公开日期 | 1990-11-01 |
| 申请日期 | 1989-04-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74471]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | HANATANI SHOICHI. Optical semiconductor device. JP1990267988A. 1990-11-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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